Optical and structural properties of the GaAs heterostructures grown using AlGaAs superlattice buffer layer on compliant Si(100) substrates with the preformed porous-Si (por-Si) layer.

ON THE MOBILITY OF GaAs-AlGaAs HETEROSTRUCTURES WITH AN IMPURITY LAYER IN THE GaAs

Layer Transfer from Chemically Etched 150 mm Porous Si Substrates

We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface conditioning for all Si layer transfer processes based on porous Si has been, up to now without exception, carried out by electrochemical etching. In contrast, our chemical stain etc...

Effect of annealing treatments on CeO2 grown on TiN and Si substrates by atomic layer deposition

In this work, we investigate the effect of thermal treatment on CeO2 films fabricated by using atomic layer deposition (ALD) on titanium nitride (TiN) or on silicon (Si) substrates. In particular, we report on the structural, chemical and morphological properties of 25 nm thick ceria oxide with particular attention to the interface with the substrate. The annealing treatments have been performe...

Atomic Layer Deposition of HfO2 Thin Films on Si and GaAs Substrates

The atomic layer deposition of HfO2 thin films is studied on Si(100) and GaAs(100) surfaces. The films are grown using tetrakis(dimethyl)amino hafnium (TDMAH) and H2O precursors at a deposition temperature of 275°C. The Si surfaces used include a H-terminated surface and an OH-rich chemical oxide. GaAs substrates are subjected to two different predeposition treatments involving an HF and a NH4O...

Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates.

We report the first photoluminescence (PL) characterization of InAs nanowires (NWs). The InAs NWs were grown on GaAs(111) B and Si(111) substrates using the Au-assisted molecular beam epitaxy (MBE) growth technique or metal-organic chemical vapor deposition (MOCVD). We compared the PL response of four samples grown under different conditions using MBE or MOCVD. High-resolution transmission elec...